IXTT20N50D Datasheet - IXYS

IXTT20N50D High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode IXTH20N50D IXTT20N50D VDSX = ID25 = ≤RDS(on) 500V 20A 330mΩ TO-268 (IXTT) Symbol VDSX VDGX VGSX VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 500 500 V V ±30 V ±40 V 20 A 50 A 400 W - .

IXTT20N50D Features

* Normally ON Mode

* International Standard Packages

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Level Shifting

* Triggers

* Solid S

IXTT20N50D Datasheet (129.75 KB)

IXTT20N50D Datasheet Preview — Preview of IXTT20N50D PDF

Datasheet Details

Part number:

IXTT20N50D

Manufacturer:

IXYS

File Size:

129.75 KB

Description:

High voltage mosfet.

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IXTT20N50D High Voltage MOSFET IXYS

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