* z z 1.13/10 Nm/lb.in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100
IXTH28N50Q Datasheet (199.65 KB)
IXTH28N50Q
International Rectifier
199.65 KB
Power mosfet.
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Advanced Technical Information
Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXTH 28N50Q.
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