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IXTH20P50P, IXTT20P50P Power MOSFET

IXTH20P50P Description

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT20P50P IXTH20P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Ts.

IXTH20P50P Features

* International Standard Packages
* Avalanche Rated
* Rugged PolarPTM Process
* Low Package Inductance
* Fast Intrinsic Diode Advantages
* Easy to Mount
* Space Savings

IXTH20P50P Applications

* High-Side Switches
* Push Pull Amplifiers
* DC Choppers
* Automatic Test Equipment
* Current Regulators © 2016 IXYS CORPORATION, All Rights Reserved DS99984C(11/16) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.5
* ID25, No

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTH20P50P, IXTT20P50P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTH20P50P, IXTT20P50P
Manufacturer
IXYS
File Size
280.75 KB
Datasheet
IXTT20P50P-IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTH20P50P, IXTT20P50P.
Please refer to the document for exact specifications by model.

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