Datasheet Specifications
- Part number
- IXTH220N055T
- Manufacturer
- IXYS Corporation
- File Size
- 195.48 KB
- Datasheet
- IXTH220N055T-IXYSCorporation.pdf
- Description
- Power MOSFET
Description
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N055T IXTQ220N055T VDSS = ID25 = RDS(on.
Features
* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 1 mA IGSS VGS = ± 20 V, VDApplications
* Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99684 (11/06) Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS=IXTH220N055T Distributors
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