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IXTH20N60

N-Channel MOSFET

IXTH20N60 Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) I GSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless othe

IXTH20N60 Datasheet (1.24 MB)

Preview of IXTH20N60 PDF

Datasheet Details

Part number:

IXTH20N60

Manufacturer:

IXYS

File Size:

1.24 MB

Description:

N-channel mosfet.
MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions.

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IXTH20N60 N-Channel MOSFET IXYS

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