IXTH20N60 N-Channel MOSFET

IXYS

Description

MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions.

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Datasheet Specifications

Part number: IXTH20N60
Manufacturer: IXYS
File Size: 1.24 MB
Datasheet: IXTH20N60_IXYS.pdf
Description: N-Channel MOSFET

Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) I GSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless othe

Applications

* l Switch-mode and resonant-mode power supplies l Motor control l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) l Space savings l High power density IXYS reserves the right to change limits, test conditions, and dim

IXTH20N60 Distributors

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IXTH20N60 N-Channel MOSFET IXYS

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