IXTH20N65X Datasheet - IXYS

IXTH20N65X Power MOSFET

Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTA20N65X IXTP20N65X IXTH20N65X VDSS = ID25 = RDS(on) 650V 20A 210m TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM IS  ID25, VDD  VDSS, TJ  150°C TC = 25C 20 40 30 320 -55 +150 150.

IXTH20N65X Features

* International Standard Packages

* Low RDS(ON) and QG

* Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS =

IXTH20N65X Datasheet (232.73 KB)