IXTH22N50P, IXTV22N50P Datasheet - IXYS

IXTH22N50P Power MOSFET

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXTV) IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLUS220SMD (IXTV_S) VDSS = 500V ID25 = 22A ≤RDS(on) 270mΩ trr(typ) = 400ns TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight G DS D (TAB) G S D (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings 500 500 ± 30 ± 40 V V V V TC = 25°C TC = 2.

IXTH22N50P Features

* z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and

IXTV22N50P-IXYS.pdf