IXTH24N45
IXYS
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IXTH24N50 - MegaMOS FET
(IXYS Corporation)
MegaMOSTMFET
IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode
VDSS 500 V 500 V
ID25
RDS(on)
21 A 0.25 Ω 24 A 0.23 Ω
Symbol VDSS VDG.
IXTH24N50L - Power MOSFET
(IXYS Corporation)
LinearTM Power MOSFET w/ Extended FBSOA
IXTH24N50L
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM .
IXTH24N50L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 480mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTH24N50Q - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested.
IXTH24N65X2 - Power MOSFET
(IXYS)
X2-Class Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA24N65X2 IXTP24N65X2 IXTH24N65X2
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/d.
IXTH240N055T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH240N055T IXTQ240N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTH240N055T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTH240N15X4 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTT240N15X4HV IXTH240N15X4
VDSS = ID25 = RDS(on)
150V 240A 4.4m
N-Channel Enhancement Mo.
IXTH24P20 - Standard Power MOSFET
(IXYS)
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 24P20 IXTT 24P20
VDSS = - 200 V ID25 = - 24 A ≤RDS(on) 0.15 Ω
Symbol VDSS VDG.
IXTH200N075T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
Trench Gate Power MOSFET
IXTH200N075T IXTQ200N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(.
