IXTH24P20 Datasheet (IXYS) - Standard Power MOSFET

IXTH24P20, Standard Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 24P20 IXTT 24P20 VDSS = - 200 V ID25 = - 24 A ≤RDS(on) 0.15 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for

IXTH24P20 Features

* International standard packages

* Low RDS (on) HDMOSTM process