Datasheet Details
- Part number
- IXTH21N50
- Manufacturer
- IXYS Corporation
- File Size
- 107.40 KB
- Datasheet
- IXTH21N50_IXYSCorporation.pdf
- Description
- MegaMOSFET
IXTH21N50 Description
MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDG.
IXTH21N50 Features
* l l l l
Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s
l
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
IXTH21N50 Applications
* l
VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
l l l
Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
l
21
📁 Related Datasheet
📌 All Tags