* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions
IXTH21N50 Datasheet (107.40 KB)
IXTH21N50
IXYS Corporation
107.40 KB
Megamosfet.
MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDG.
📁 Related Datasheet
IXTH21N50 N-Channel MOSFET (INCHANGE)
IXTH200N075T Power MOSFET (IXYS Corporation)
IXTH200N075T N-Channel MOSFET (INCHANGE)
IXTH200N085T Power MOSFET (IXYS Corporation)
IXTH200N10T Power MOSFET (IXYS Corporation)
IXTH200N10T N-Channel MOSFET (INCHANGE)
IXTH20N50D High Voltage MOSFET (IXYS)
IXTH20N60 N-Channel MOSFET (IXYS)
IXTH20N60 N-Channel MOSFET (INCHANGE)
IXTH20N65X Power MOSFET (IXYS)
