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IXTH220N075T Datasheet - IXYS Corporation

Power MOSFET

IXTH220N075T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VD

IXTH220N075T Datasheet (179.72 KB)

Preview of IXTH220N075T PDF

Datasheet Details

Part number:

IXTH220N075T

Manufacturer:

IXYS Corporation

File Size:

179.72 KB

Description:

Power mosfet.
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N075T IXTQ220N075T VDSS = ID25 = RDS(on.

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IXTH220N075T Power MOSFET IXYS Corporation

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