IXTH240N055T N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXTH240N055T
Manufacturer: INCHANGE
File Size: 334.92 KB
Datasheet: IXTH240N055T-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 240 A IDM Drain Current-Single Pulsed 650 A PD Total Dissipation @TC=25℃ 480 W Tj Operating Junction Temperature -55~

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IXTH240N055T N-Channel MOSFET INCHANGE

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