IXTH220N055T N-Channel MOSFET

INCHANGE

IXTH220N055T Description

isc N-Channel MOSFET Transistor *.

IXTH220N055T Features

* Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTH220N055T Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 220 A IDM Drain Current-Single Pulsed 600 A PD Total Dissipation @TC=25℃ 430 W Tj Operating Junction Temperature -55~

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Datasheet Details

Part number: IXTH220N055T
Manufacturer: INCHANGE
File Size: 334.29 KB
Datasheet: IXTH220N055T-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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