IXTH24N50L - N-Channel MOSFET
IXTH24N50L Features
* Static drain-source on-resistance: RDS(on) ≤ 480mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* Current Regulators
* Solid State Circuit
