IXTH20N65X N-Channel MOSFET

INCHANGE

IXTH20N65X Description

isc N-Channel MOSFET Transistor *.

IXTH20N65X Features

* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) ≤ 210mΩ@VGS= 10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTH20N65X Applications

* Easy to Mount
* Space Savings
* High Power Density
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 40 A PD Tot

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Datasheet Details

Part number: IXTH20N65X
Manufacturer: INCHANGE
File Size: 332.62 KB
Datasheet: IXTH20N65X-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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