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IXTH22N50P - N-Channel MOSFET

IXTH22N50P Description

isc N-Channel MOSFET Transistor *.

IXTH22N50P Features

* With TO-3PN packaging
* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTH22N50P Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 500 UNIT V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation 350 W Tj Operating Junction

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Datasheet Details

Part number
IXTH22N50P
Manufacturer
INCHANGE
File Size
300.80 KB
Datasheet
IXTH22N50P-INCHANGE.pdf
Description
N-Channel MOSFET

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