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IXTH200N075T - Power MOSFET

IXTH200N075T Description

Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(.

IXTH200N075T Features

* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS CORPORATION All rights reserved DS99634 (11/06) IXTH200N075T IXTQ200N075T Symbol Test

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