Overview: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =
RDS(on) ≤ 85 200 5.0 V A mΩ Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247 Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Maximum Ratings 85 85
± 20
200 75
540
25 1.0 V V
V
A A A
A J 3 V/ns 480 W -55 ... +175 175
-55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 5.5 g 6g Characteristic Values Min. Typ. Max. 85 V
2.0 4.0 V
± 200 nA
5 µA 250 µA 4.0 5.
