IXTH200N10T
INCHANGE
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N-channel mosfet.
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IXTH200N10T - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH200N10T IXTQ200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst.
IXTH200N075T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
Trench Gate Power MOSFET
IXTH200N075T IXTQ200N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(.
IXTH200N075T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTH200N085T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH200N085T IXTQ200N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTH20N50D - High Voltage MOSFET
(IXYS)
High Voltage MOSFET
N-Channel, Depletion Mode
IXTH20N50D IXTT20N50D
VDSX = ID25 = ≤RDS(on)
500V 20A 330mΩ
TO-268 (IXTT)
Symbol
VDSX VDGX
VGSX VGS.
IXTH20N60 - N-Channel MOSFET
(IXYS)
MegaMOSTMFET
Obsolete: IXTM20N60
N-Channel Enhancement Mode
IXTH 20N60 IXTM 20N60
VDSS = 600 V
ID25 = 20 A RDS(on) = 0.35 Ω
Symbol
Test Conditions.
IXTH20N60 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
:.
IXTH20N65X - Power MOSFET
(IXYS)
Preliminary Technical Information
X-Class Power MOSFET
N-Channel Enhancement Mode
IXTA20N65X IXTP20N65X IXTH20N65X
VDSS = ID25 = RDS(on)
650V 20A.
IXTH20N65X - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) ≤ 210mΩ@VGS= 10V ·Fas.
IXTH20P50P - Power MOSFET
(IXYS)
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTT20P50P IXTH20P50P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Ts.
