IXTH200N10T N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IXTH200N10T *.

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Datasheet Specifications

Part number: IXTH200N10T
Manufacturer: INCHANGE
File Size: 331.83 KB
Datasheet: IXTH200N10T-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* Robotics and Servo Controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Curr

IXTH200N10T Distributors

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IXTH200N075T IXTH200N085T IXTH20N50D IXTH20N60 IXTH20N65X IXTH20P50P

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IXTH200N10T N-Channel MOSFET INCHANGE

INCHANGE IXTH200N10T-like datasheet