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IXTH200N10T

N-Channel MOSFET

IXTH200N10T Features

* Drain Source Voltage- : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mode Powe

IXTH200N10T Datasheet (331.83 KB)

Preview of IXTH200N10T PDF

Datasheet Details

Part number:

IXTH200N10T

Manufacturer:

INCHANGE

File Size:

331.83 KB

Description:

N-channel mosfet.

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TAGS

IXTH200N10T N-Channel MOSFET INCHANGE

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