Datasheet Details
- Part number
- IXTH200N10T
- Manufacturer
- INCHANGE
- File Size
- 331.83 KB
- Datasheet
- IXTH200N10T-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTH200N10T Description
isc N-Channel MOSFET Transistor IXTH200N10T *.
IXTH200N10T Features
* Drain Source Voltage-
: VDSS= 100V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 5.5mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTH200N10T Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* Robotics and Servo Controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Curr
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