IXTH24N50 Datasheet - IXYS Corporation

IXTH24N50 MegaMOS FET

MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 21N50 24N50 21N50 24N50 Maximum Ratings 500 500 ±20 ±30 21 24 84 96 300 -55 +150 150 -55 +150 V V V V A A A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204.

IXTH24N50 Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions

IXTH24N50_IXYSCorporation.pdf