DG3 Datasheet | Specifications & PDF Download

NPN 3DG3020 A1-HK ○R 3DG3020 A1-HK NPN ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 450 1.5 0

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NPN 1 ： R ○ 3DG3020A1 3DG3020A1 NPN ，， VCEO ，， IC 、。 Ptot （Ta=25℃） ：TO-92， RoHS 。 TO-92 450 1.5 0.8 V A W 2 ： ● ● ● ● ● 1 2 3 1. B

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Aluminum Electrolytic Capacitors Snap-In, Mini., 105°C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Aluminum Electrolytic Capacitors/TS-NH s Featu

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FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Sem

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New Product LQ121S1DG31 Features Color TFT-LCD Module (FA/POS/Measuring instruments) s 31 cm [12.1 ] SVGA format s High brightness (300 cd/m2) s Bu

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DG300A, DG301A, DG303A Data Sheet June 1999 File Number 3119.2 TTL-Compatible, CMOS Analog Switches The DG300A through DG303A family of monolithic CM

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www.DataSheet4U.com DG381B/384B/387B/390B Vishay Siliconix CMOS Analog Switches FEATURES D D D D BENEFITS APPLICATIONS 15-V Input Range D Full R

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) FEATURES z Low Current z High Volta

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KDG30N120H2 IGBT Features  1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms

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RECORDS OF REVISION LQ104S1DG34 SPEC No. DATE LD-21408A LD-21408B May.8.2009 Mar.26.2010 SUMMARY PAGE -1 2.Over view Revision of description conc

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DG3N80 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG3N80N，， ，，，。 ，，。 DG3N80 is an N-channel enhancement mode MOSFET, which is

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Aluminum Electrolytic Capacitors Snap-In, Mini., 105°C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Aluminum Electrolytic Capacitors/TS-NH s Featu

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Aluminum Electrolytic Capacitors Snap-In, Mini., 105°C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Aluminum Electrolytic Capacitors/TS-NH s Featu

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TCR4DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4DG series 420 mA CMOS Low Drop-Out Regulator with inrush current protecti

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TCR4DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4DG series 420 mA CMOS Low Drop-Out Regulator with inrush current protecti

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TCR4DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4DG series 420 mA CMOS Low Drop-Out Regulator with inrush current protecti

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FDG327NZ October 2015 FDG327NZ 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improv

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FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features „ Max rDS(on) = 95m: at

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