DIode Datasheet | Specifications & PDF Download

NOT RECOMMENDED FOR NEW DESIGN USE AZ1117C or AZ1117I Pb Lead-Free AZ1117 1A LOW DROPOUT LINEAR REGULATOR Description The AZ1117 is a series of lo

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74HC595 8-BIT SHIFT REGISTER WITH 8-BIT OUTPUT REGISTER Description The 74HC595 is an high speed CMOS device. An eight bit shift register accpets dat

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product data sheet Supersedes data of 2002 Jan 23 2004 Aug 10 NXP Semic

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1N4728 THRU 1N4764 ZENER DIODES FEATURES DO-41 Glass ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high pow

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S1NBC80-7062 Bridge Diodes 800V, 1.5A Feature ・Small SMD (There is also DIP) ・High IFSM ・Pin-distance 3.4mm for isolation ・Pb free terminal ・RoHS:Yes

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OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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www.DataSheet4U.com RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3

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S4VB60 Bridge Diodes 600V, 4A Feature ・Input/Outout In-line ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): S4VB Equivalent circuit Absol

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SK12 SK115 SK12 SK115 SMD Schottky Barrier Rectifier Diodes SMD Schottky-Gleichrichterdioden Version 2017-01-26 ~ SMA / ~ DO-214AC 5± 0.2

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NE555 PRECISION TIMER Description These devices are precision timing circuits capable of producing accurate time delays or oscillation. In the time-d

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ESAD83-004 (30A) (40V / 30A ) SCHOTTKY BARRIER DIODE Features Low VF Super high speed switching High reliability by planer design Outline drawings,

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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SEMICONDUCTOR TECHNICAL DATA MBRD5U100D SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATUR

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NEW PRODUCT LM358 LOW POWER DUAL OPERATIONAL AMPLIFIERS Description Pin Assignments The LM358 series consists of two independent, high gain, inter

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Power Diodes Controlled Avalanche Features: • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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