DM-500 Datasheet | Specifications & PDF Download

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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Data Sheet 3.0 V to 5.5 V, ±12 kV IEC ESD Protected, 500 kbps/50 Mbps RS-485 Transceivers ADM3061E/ADM3062E/ADM3063E/ADM3065E/ADM3066E/ADM3067E FEAT

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Data Sheet 3.0 V to 5.5 V, ±12 kV IEC ESD Protected, 500 kbps/50 Mbps RS-485 Transceivers ADM3061E/ADM3062E/ADM3063E/ADM3065E/ADM3066E/ADM3067E FEAT

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LCD Module Specification Type No. ＤＭＦ５００５Ｎ First Edition Approved by February 6, 1997 Final Revision ******* Checked by Checked by Prepared by P

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® DMV1500M DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL IF(AV) VRRM trr (max) VF (max) 3A 600 V 50 ns

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BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General desc

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Data Sheet 3.0 V to 5.5 V, ±12 kV IEC ESD Protected, 500 kbps/50 Mbps RS-485 Transceivers ADM3061E/ADM3062E/ADM3063E/ADM3065E/ADM3066E/ADM3067E FEAT

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Data Sheet 3.0 V to 5.5 V, ±12 kV IEC ESD Protected, 500 kbps/50 Mbps RS-485 Transceivers ADM3061E/ADM3062E/ADM3063E/ADM3065E/ADM3066E/ADM3067E FEAT

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Type DCMC 85 °C High Capacitance, Screw Terminal, Aluminum Highest Capacitance Screw Terminal Type With more capacitance and often more ripple-current

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LCD Module Specification Type No. DMF–50036ZNFU–FW First Edition Approved by June 18, 1998 Final Revision ******* Checked by Checked by Prepared

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Type No. w w LCD Module h Specification S ta a ＤＭＦ５００１ＮＹ－ＬＹ－ＡＩＥ .D w 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. e e t4 U . First Edition Approved by P

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FDMS86500L N-Channel PowerTrench® MOSFET September 2011 FDMS86500L N-Channel PowerTrench® MOSFET 60 V, 80 A, 2.5 mΩ Features General Description Thi

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DLP4500 .45 WXGA DMD DLP4500 DLPS151B – JANUARY 2019 – REVISED MAY 2022 1 Features • 0.45-Inch Diagonal Micromirror Array – 912 × 1140 Resolution Ar

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are design

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11.5 ±0.2 14 ±0.2 Replaces DS6282-4 TRENCH Gen5 TMOS Preliminary Information DIM1200DDM17-PT500 Dual Switch IGBT Module DS6282-5 May 2021 (LN40943)

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MOSFET POWERTRENCH), N-Channel, DUAL COOL) 56 60 V, 108 A, 2.3 mW FDMS86500DC General Description This N−Channel MOSFET is produced using onsemi’s ad

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LCD Module Specification Type No. ＤＭＦ５００３ＮＦ－ＦＷ First Edition Mar 10, 2000 Final Revision ******* Approved by Checked by Checked by Prepared by Prod

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LCD Module Specification Type No. First Edition Nov 17, 1998 Final Revision ******* Approved by Checked by Checked by Prepared by Production Div. Q

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