DMP20 Datasheet | Specifications & PDF Download

DMP2004WK P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • •

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Product Summary V(BR)DSS RDS(ON) max Package -20V 60mΩ @ VGS = -4.5V 90mΩ @ VGS = -2.5V SOT-23 ID max TA = +25°C -4.0A -3.3A DMP2065U 20V P-CH

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NEW PRODUCT DMP2066LSN P-CHANNEL ENHANCEMENT MODE MOSFET Features • Low RDS(ON): • 40 mΩ @VGS = -4.5V • 70 mΩ @VGS = -2.5V • Low Input/Output Leakag

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NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE DMP2040USS DMP2066LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON)

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DMP2022LSS-13-VB DMP2022LSS-13-VB Datasheet P-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.015 at VGS = - 4.5 V

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DMP2042UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ @VGS = -4.5V, TA = +25°C) BVDSS -20V RDS(ON) 37mΩ @ VGS = -4.5V 49mΩ @ VGS = -2.

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DMP2035UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 29mΩ @ VGS = -4.5V 39mΩ @ VGS = -2.5V ID Max TA = +25°C -6.9A

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ADVNAEANWDCVEPAIRNNOCFDEOU IRCNTMFAOTIROMNATION DMP2010UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS -20V RDS(ON) Ma

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NEW PRODUCT DMP2070UCB6 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary(Typ. @ VGS = -4.5V, TA = +25°C) VDSS -20V RDS(on) 55mΩ Qg 2.9nC Qgd 0.

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NEW PRODUCT DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) max 45mΩ @ VGS = -4.5V 65mΩ @ VGS = -2.5V ID max T

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DMP2060UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) max 90mΩ @ VGS = -4.5V 137mΩ @ VGS = -2.5V ID MAX TA = +2

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DMP2047UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -20V RDS(on) 40mΩ Qg 2.3nC Qgd 0.4nC ID -4.1

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SPICE MODEL: DMP2012SN DMP2012SN P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Low On-Resistance Low Gate

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DMP2022LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  13mΩ @ VGS = -10V  16mΩ @ VGS = -4.5V  22mΩ @ VGS = -2.5V  Low

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Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Ga

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NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE DMP2040UVT DMP2066LDM P-CHANNEL ENHANCEMENT MODE MOSFET Features  Low RDS(ON): 40m @VGS = -4.5V 7

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DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) Package 36mΩ @ VGS = -4.5V 56mΩ @ VGS = -2.5V 75mΩ @ VGS

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Product Summary V(BR)DSS 20V RDS(on) max 0.9Ω @ VGS = 4.5V ID TA = +25°C -430mA Description This MOSFET is designed to minimize the on-state resis

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DMP2023UFDF 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 27mΩ @ VGS = -4.5V 32mΩ @ VGS = -2.5V 50mΩ @ VGS = -1.8V 9

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NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE DMP2040USS DMP2038USS 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Ma

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