* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 40mΩ to Minimize On-State Losses Qg = 2.3nC for Ultra-Fast Switching
* Vgs(th) = -0.8V typ. for a Low Turn-On Potential
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection o
DMP2047UCB4 Datasheet (402.81 KB)
DMP2047UCB4
402.81 KB
P-channel mosfet.
DMP2047UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS -20V
RDS(on) 40mΩ
Qg 2.3nC
Qgd 0.4nC
ID -4.1.
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