DS3 Datasheet | Specifications & PDF Download

DS3231 Extremely Accurate I2C-Integrated RTC/TCXO/Crystal General Description The DS3231 is a low-cost, extremely accurate I2C real-time clock (RTC)

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PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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MDS3604– Single P-Channel Trench MOSFET, -30V, -12.1A, 10.0mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -12.1A, 10.0mΩ General Description The M

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LSM6DS3 iNEMO inertial module: always-on 3D accelerometer and 3D gyroscope Datasheet - production data LGA-14L (2.5 x 3 x 0.83 mm) typ. Features  P

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30V P-Channel MOSFETs PDS3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Features  Guard Ring Die Construction for Transient Protection  Low Forward Voltage Drop  Very Low Leakage Current  Highly Stable Oxide Passivated

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Features  Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  Low Forward Voltage Drop  Low Reverse Leakage Cur

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PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History

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DS3231M ±5ppm, I2C Real-Time Clock General Description The DS3231M is a low-cost, extremely accurate, I2C realtime clock (RTC). The device incorpora

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March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode p

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30V N-Channel MOSFETs PDS3808 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P -Channel logic level enhancement mo

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30V P-Channel MOSFETs PDS3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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PDS32W THRW PDS320W Switching Diode Description Surface Mount Schottky Barrier Rectifier Rectifiers Reverse Voltage 20 to 200 V Forward Current 3.0 A

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NDS351AN June 2003 NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using

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