Datasheet Details
| Part number | FDS3812 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 86.38 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDS3812 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
Key Features
- 3.4 A, 80 V. RDS(ON) = 74 mΩ @ VGS = 10 V RDS(ON) = 84 mΩ @ VGS = 6 V.
- Fast switching speed.
- Low gate charge (13nC typ).
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed TA=25oC unless otherwise noted Param.