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FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature  BVCEO > 120V  IC = 1A Continuous Collector Current  ICM = 2A Peak Pulse

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FMMTA92 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features  BVCEO > -300V  IC = -200mA High Continuous Collector Current  Complementary Type – FMM

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Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Single Shot Electrical Characteristics (Ta = 25°C) Tj

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SOT23 SILICON VOLTAGE REGULATOR DIODES ISSUE 2 - SEPTEMBER 1995 PIN CONFIGURATION 7 FMMZ5232 to FMMZ5257 1 3 2 SOT23 PARTMARKING DETAILS: F

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Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features  BVCEO >

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A Product Line of Diodes Incorporated FMMT6520 350V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits • BVCEO > -350V • Maxim

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SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS FMMT2222 FMMT2222A ISSUE 3 – FEBRUARY 1996 FEATURES * Fast switching PARTMARKING DETAILS FMMT2222

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FMMT494Q 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature This Bipolar Junction Transistor (BJT) is designed to meet the stringent re

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Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Single Shot Electrical Characteristics (Ta = 25°C) Tj

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Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Single Shot Electrical Characteristics (Ta = 25°C) Tj

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Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Single Shot Electrical Characteristics (Ta = 25°C) Tj

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SOT23 SILICON VOLTAGE REGULATOR DIODES ISSUE 2 - SEPTEMBER 1995 PIN CONFIGURATION 7 FMMZ5232 to FMMZ5257 1 3 2 SOT23 PARTMARKING DETAILS: F

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SOT23 SILICON VOLTAGE REGULATOR DIODES ISSUE 2 - SEPTEMBER 1995 PIN CONFIGURATION 7 FMMZ5232 to FMMZ5257 1 3 2 SOT23 PARTMARKING DETAILS: F

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SOT23 SILICON VOLTAGE REGULATOR DIODES ISSUE 2 - SEPTEMBER 1995 PIN CONFIGURATION 7 FMMZ5232 to FMMZ5257 1 3 2 SOT23 PARTMARKING DETAILS: F

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SOT23 SILICON VOLTAGE REGULATOR DIODES ISSUE 2 - SEPTEMBER 1995 PIN CONFIGURATION 7 FMMZ5232 to FMMZ5257 1 3 2 SOT23 PARTMARKING DETAILS: F

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SOT23 SILICON VOLTAGE REGULATOR DIODES ISSUE 2 - SEPTEMBER 1995 PIN CONFIGURATION 7 FMMZ5232 to FMMZ5257 1 3 2 SOT23 PARTMARKING DETAILS: F

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SOT23 SILICON VOLTAGE REGULATOR DIODES ISSUE 2 - SEPTEMBER 1995 PIN CONFIGURATION 7 FMMZ5232 to FMMZ5257 1 3 2 SOT23 PARTMARKING DETAILS: F

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FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features  BVCEO > 50V  IC = 2A Continuous Collector Current  625mW Power Dissipation 

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A Product Line of Diodes Incorporated FMMT620 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features • BVCEO > 80V • IC = 1.5A Continuous Collec

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Features • BVCEO > 100V • IC = 900mA high Continuous Collector Current • ICM = 5A Peak Pulse Current • 625mW Power dissipation • hFE > 5k up to 2A for

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