.
Diodes
14
2DB1132R - 32V PNP POWER SWITCHING TRANSISTOR
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Ty.
Diodes
12
2DB1132Q - 32V PNP POWER SWITCHING TRANSISTOR
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Ty.
Diodes
10
2DB1386Q - 20V PNP MEDIUM POWER TRANSISTOR
2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features BVCEO > -20V IC = -5A high Continuous Current Low saturation voltage VCE(sat) < -1.
Diodes
9
2DB1424R - PNP SURFACE MOUNT TRANSISTOR
2DB1424R PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (2DD2150) • Ideall.
Diodes
8
2DB1132P - 32V PNP POWER SWITCHING TRANSISTOR
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Ty.
Diodes
8
2DB1184Q - 50V PNP MEDIUM POWER TRANSISTOR
Features • BVCEO > -50V • IC = -3A High Continuous Collector Current • ICM = -4.5A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collec.
Diodes
8
2DB1714 - PNP SURFACE MOUNT TRANSISTOR
OBSOLETE – PART DISCONTINUED PART OBSOLETE - USE FCX789A 2DB1714 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial .
Diodes
7
2DB1119S - PNP SURFACE MOUNT TRANSISTOR
2DB1119S PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • I.
Diodes
7
2DB1182Q - 32V PNP MEDIUM POWER TRANSISTOR
Features BVCEO > -32V IC = -2A High Continuous Collector Current ICM = -3A Peak Pulse Current Epitaxial Planar Die Construction Low Collecto.
Diodes
6
2DB1188P - 32V PNP MEDIUM POWER TRANSISTOR
Features BVCEO > -32V IC = -2A high Continuous Current Low saturation voltage VCE(sat) < 800mV @ 2A Complementary NPN Type: 2DD1766 Totally .
Diodes
6
2DB1188Q - 32V PNP MEDIUM POWER TRANSISTOR
Features BVCEO > -32V IC = -2A high Continuous Current Low saturation voltage VCE(sat) < 800mV @ 2A Complementary NPN Type: 2DD1766 Totally .
Diodes
6
2DB1188R - 32V PNP MEDIUM POWER TRANSISTOR
Features BVCEO > -32V IC = -2A high Continuous Current Low saturation voltage VCE(sat) < 800mV @ 2A Complementary NPN Type: 2DD1766 Totally .
Diodes
6
2DB1386R - 20V PNP MEDIUM POWER TRANSISTOR
2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features BVCEO > -20V IC = -5A high Continuous Current Low saturation voltage VCE(sat) < -1.
Diodes
6
2DB1694 - PNP SURFACE MOUNT TRANSISTOR
Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complement.
Diodes
6
2DB1713 - 12V PNP MEDIUM POWER TRANSISTOR
2DB1713 12V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features BVCEO > -12V IC = -3A High Continuous Current Low Saturation Voltage VCE(sat) < -0.25.
Diodes
6
2DB1697 - PNP SURFACE MOUNT TRANSISTOR
NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Ampl.
Diodes
6
2DB1689 - PNP SURFACE MOUNT TRANSISTOR
Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complement.
NXP
4
PZU22DB2 - Dual Zener diodes
PZUxDB2 series Dual Zener diodes Rev. 01 — 31 March 2008 Product data sheet 1. Product profile 1.1 General description Dual isolated general-purpose.
NXP
3
PZU8.2DB2 - Dual Zener diodes
PZUxDB2 series Dual Zener diodes Rev. 01 — 31 March 2008 Product data sheet 1. Product profile 1.1 General description Dual isolated general-purpose.
NXP
3
PZU12DB2 - Dual Zener diodes
PZUxDB2 series Dual Zener diodes Rev. 01 — 31 March 2008 Product data sheet 1. Product profile 1.1 General description Dual isolated general-purpose.