Diodes FMM Datasheet | Specifications & PDF Download

A Product Line of Diodes Incorporated FMMT720 40V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features • BVCEO > -40V • IC = -1.5A Continuous Coll

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SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS FMMT2222 FMMT2222A ISSUE 3 – FEBRUARY 1996 FEATURES * Fast switching PARTMARKING DETAILS FMMT2222

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FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features  BVCEO > 50V  IC = 2A Continuous Collector Current  625mW Power Dissipation 

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Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature  BVCEO > 60V 

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Feature  BVCEO > 60V  IC = 1A Continuous Collector Current  ICM = 2A Peak Pulse Current  RCE(sat) = 195mΩ for a Low Equivalent On-Resistance  500

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A Product Line of Diodes Incorporated FMMT591A 40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features • BVCEO > -40V • IC = -1A High Cont

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A Product Line of Diodes Incorporated FMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits • BVCEO > -30V

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FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature  BVCEO > 120V  IC = 1A Continuous Collector Current  ICM = 2A Peak Pulse

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Features  BVCEO > 300V  IC = 200mA high Collector Current  350mW Power dissipation  Excellent hFE Characteristics Up To 30mA  Complementary part

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SANKEN ELECTRIC CO., LTD. １ Scope The present specifications shall apply to Sanken silicon diode, FMM-26S/R. ２ Outline Type Structure Applications S

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A Product Line of Diodes Incorporated FMMT722 70V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features • BVCEO > -70V • IC = -1.5A Continuous Coll

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FMMT493A HIGH GAIN NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature  BVCEO > 60V  IC = 1A Continuous Collector Current  VCE(SAT)= 0.5V @1A  500mW Pow

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Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Single Shot Electrical Characteristics (Ta = 25°C) Tj

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SOT23 SILICON VOLTAGE REGULATOR DIODES ISSUE 2 - SEPTEMBER 1995 PIN CONFIGURATION 7 FMMZ5232 to FMMZ5257 1 3 2 SOT23 PARTMARKING DETAILS: F

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Features  BVCEO > 400V  IC = 225mA High Continuous Collector Current  ICM = 1A Peak Pulse Current  500mW Power Dissipation  Excellent hFE Charact

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FMMTA92 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features  BVCEO > -300V  IC = -200mA High Continuous Collector Current  Complementary Type – FMM

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FMMT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features • BVCEO > -60V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current

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Features  BVCEO > 100V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  500mW Power Dissipation  hFE Characterised Up to

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