E-PHEMT Datasheet | Specifications & PDF Download

Preliminary Data Sheet 1.0 FMS2001 ES1 Low Loss SPDT Reflective pHEMT MMIC Switch Description The FMS2001 is a low loss linear Single-Pole Double-T

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www.DataSheet4U.com TC2182 REV4_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • • 0.5 dB Typical Noise Figure at 12 GHz Hig

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Data Sheet HMC7950 2 GHz to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier FEATURES ► Output power for 1 dB compression (P1dB): 16 dBm typical ► Saturat

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2 W POWER PHEMT • FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compressi

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SWITCHES - CHIP HMC347A v02.0217 GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications This switch is suitable DC - 20 GHz applica

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PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT • FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz

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www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300

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Advance Product Information September 19, 2005 DC - 12 GHz Discrete power pHEMT • • • • • • • • TGF2021-04 Key Features and Performance Frequency R

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VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Avago Technologies has combined it’s industry leading E-pHE

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Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-08 Key Features and Performance • Frequency Range: DC - 12 GHz • > 39 dBm

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1

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LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 26 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 0.

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HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption LPS200 GATE

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Preliminary GaAs PHEMT Switchable Gain LNA AL108-338 Features ■ For 3.2–3.8 GHz Fixed Wireless Applications ■ Adjustable Gain ■ +7 dBm Output Power ■

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AMPLIFIERS - LINEAR & POWER - CHIP PRELIMINARY Typical Applications The HMC994A is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Milit

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DATA SHEET AS218-321, AS218-321LF: PHEMT GaAs IC High-Power Transfer Switch 0.1–6 GHz Applications ● WLAN 802.11a, b, g diversity Features ● Operatin

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E-pHEMT MMIC Product Features • 30 ~ 2150MHz • High Gain • High linearity • SOIC-8 SMD Type package • Lower manufacturing cost • Low Noise Figure • -6

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Filtronic Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Freque

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www.DataSheet4U.com HMC565 v00.0206 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC565 is ideal f

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