E202 Datasheet | Specifications & PDF Download

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PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for

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NTE2016/NTE2017/NTE2018/NTE2019/NTE2020 Integrated Circuit 8–Channel Darlington Array/Driver Description: Ideally suited for interfacing between low–l

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PE2023 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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NTE2021 & NTE2022 Integrated Circuit 8–Digit/Segment Fluorescent Display Driver Description: The NTE2021 and NTE2022 consist of eight NPN Darlington o

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NTE2027 Integrated Circuit Hex LED Digit Driver Description: The NTE2027 is an interface circuit in a 14–Lead DIP typ package designed to be used in c

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PE2023 P-Channel Enhancement Mode Power MOSFET Description The PE2023 uses advanced trench technology to provide excellent RDS(ON) and low gate charg

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http://www.ncepower.com Pb Free Product NCE2025I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2025I uses advanced trench technolog

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NTE2023 Integrated Circuit General Purpose, High Current 7–Segment Display Driver Description: The NTE2023 is a general purpose high current transisto

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NTE2021 & NTE2022 Integrated Circuit 8–Digit/Segment Fluorescent Display Driver Description: The NTE2021 and NTE2022 consist of eight NPN Darlington o

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NCE2025S-VB NCE2025S-VB Datasheet N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0049 at VGS = 4.5 V 20 0.0056

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NTE2024 Integrated Circuit 2–Digit BCD–to–7–Segment Decoder/Driver Features: D Separate BCD inputs and segment outputs for each digit D Input loading

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NTE2026 Integrated Circuit Gas–Discharge Display Driver Description: The NTE2026 is a monolithic high–voltage bipolar integrated circuit which dramati

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ACE2020M N-Channel 200-V MOSFET Description ACE2020M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for

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http://www.ncepower.com Pb Free Product NCE2025S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2025S uses advanced trench technolog

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DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diode (Singles, Pairs, and Quads) Bondable Beam-Lead Devices Applications  Microwav

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