E25/E30 25~30 Watts DIP Type 2:1 Input DC - DC Co.
MA4E2514 - Low and Medium Barrier Silicon Schottky Diode
MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Features • Extremely Low Parasitic Capitance and Inductance • Sur.CY14E256LA - 256-Kbit nvSRAM
CY14E256LA 256-Kbit (32 K × 8) nvSRAM 256-Kbit (32 K × 8) nvSRAM Features ■ 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14E256.CY14E256Q - 256-Kbit (32 K x 8) SPI nvSRAM
CY14C256Q CY14B256Q CY14E256Q 256-Kbit (32 K × 8) SPI nvSRAM Not Recommended for New Designs 256-Kbit (32 K × 8) SPI nvSRAM Features ■ 256-Kbit non.PRME2500 - DIP 14 SERIES REED RELAYS
www.DataSheet4U.com SRC DEVICES DIP 14 SERIES REED RELAYS MSS2 s MSS7 s PRMA s DSS7 s PRME s MVS2 s MVS7 DESCRIPTION SRC Device’s epoxy molded DI.NTE2514 - Silicon Complementary Transistors
NTE2513 (NPN) & NTE2514 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain–.V14E250P - Radial Lead Varistors
UltraMOV® Varistor Series Metal-Oxide Varistors (MOVs) Radial Lead Varistors > UltraMOV® Varistor Series RoHS Agency Approvals Agency Agency Appro.V14E250 - Radial Lead Varistors
UltraMOV® Varistor Series Metal-Oxide Varistors (MOVs) Radial Lead Varistors > UltraMOV® Varistor Series RoHS Agency Approvals Agency Agency Appro.E25-14 - 25~30 Watts DIP Type 2:1 Input DC-DC Converter
E25/E30 25~30 Watts DIP Type 2:1 Input DC - DC Converter ◆ 25-30W Isolated Output ◆ 2:1 Input Range ◆ Efficiency To 88% ◆ Regulated Outputs ◆ Remot.MSS60-148-E25 - Extra High Barrier Silicon Schottky Diodes
MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Re.MSS60-144-E25 - Extra High Barrier Silicon Schottky Diodes
MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Re.MSS50-146-E25 - High Barrier Silicon Schottky Diodes
MSS50-xxx-x Series High Barrier Silicon Schottky Diodes Features VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Scre.MSS40-148-E25 - Medium Barrier Silicon Schottky Diodes
MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Sc.MSS40-141-E25 - Medium Barrier Silicon Schottky Diodes
MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Sc.MSS39-148-E25 - P-Type Silicon Schottky Diodes
MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Dev.MSS30-148-E25 - Low Barrier Silicon Schottky Diodes
MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Scree.MSS30-142-E25 - Low Barrier Silicon Schottky Diodes
MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Scree.ME2514 - N-Channel MOSFET
N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using h.ME2514-G - N-Channel MOSFET
N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using h.