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E25-14 Datasheet, Features, Application

E25-14 25~30 Watts DIP Type 2:1 Input DC-DC Converter

E25/E30 25~30 Watts DIP Type 2:1 Input DC - DC Co.

MACOM

MA4E2514 - Low and Medium Barrier Silicon Schottky Diode

MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Features • Extremely Low Parasitic Capitance and Inductance • Sur.
1.0 · rating-1
Cypress Semiconductor

CY14E256LA - 256-Kbit nvSRAM

CY14E256LA 256-Kbit (32 K × 8) nvSRAM 256-Kbit (32 K × 8) nvSRAM Features ■ 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14E256.
1.0 · rating-1
Cypress Semiconductor

CY14E256Q - 256-Kbit (32 K x 8) SPI nvSRAM

CY14C256Q CY14B256Q CY14E256Q 256-Kbit (32 K × 8) SPI nvSRAM Not Recommended for New Designs 256-Kbit (32 K × 8) SPI nvSRAM Features ■ 256-Kbit non.
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Cypress Semiconductor

CY7C1460KVE25 - 36-Mbit (1M x 36/2M x 18) Pipelined SRAM

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Cypress Semiconductor

CY7C1462KVE25 - 36-Mbit (1M x 36/2M x 18) Pipelined SRAM

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SRC Devices

PRME2500 - DIP 14 SERIES REED RELAYS

www.DataSheet4U.com SRC DEVICES DIP 14 SERIES REED RELAYS MSS2 s MSS7 s PRMA s DSS7 s PRME s MVS2 s MVS7 DESCRIPTION SRC Device’s epoxy molded DI.
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NTE

NTE2514 - Silicon Complementary Transistors

NTE2513 (NPN) & NTE2514 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain–.
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Littelfuse

V14E250P - Radial Lead Varistors

UltraMOV® Varistor Series Metal-Oxide Varistors (MOVs) Radial Lead Varistors > UltraMOV® Varistor Series RoHS Agency Approvals Agency Agency Appro.
1.0 · rating-1
Littelfuse

V14E250 - Radial Lead Varistors

UltraMOV® Varistor Series Metal-Oxide Varistors (MOVs) Radial Lead Varistors > UltraMOV® Varistor Series RoHS Agency Approvals Agency Agency Appro.
1.0 · rating-1
FranMar

E25-14 - 25~30 Watts DIP Type 2:1 Input DC-DC Converter

E25/E30 25~30 Watts DIP Type 2:1 Input DC - DC Converter ◆ 25-30W Isolated Output ◆ 2:1 Input Range ◆ Efficiency To 88% ◆ Regulated Outputs ◆ Remot.
1.0 · rating-1
MA-COM

MSS60-148-E25 - Extra High Barrier Silicon Schottky Diodes

MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Re.
1.0 · rating-1
MA-COM

MSS60-144-E25 - Extra High Barrier Silicon Schottky Diodes

MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Re.
1.0 · rating-1
MA-COM

MSS50-146-E25 - High Barrier Silicon Schottky Diodes

MSS50-xxx-x Series High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Scre.
1.0 · rating-1
MA-COM

MSS40-148-E25 - Medium Barrier Silicon Schottky Diodes

MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Sc.
1.0 · rating-1
MA-COM

MSS40-141-E25 - Medium Barrier Silicon Schottky Diodes

MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Sc.
1.0 · rating-1
MA-COM

MSS39-148-E25 - P-Type Silicon Schottky Diodes

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev.
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MA-COM

MSS30-148-E25 - Low Barrier Silicon Schottky Diodes

MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Scree.
1.0 · rating-1
MA-COM

MSS30-142-E25 - Low Barrier Silicon Schottky Diodes

MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Scree.
1.0 · rating-1
Matsuki

ME2514 - N-Channel MOSFET

N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using h.
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Matsuki

ME2514-G - N-Channel MOSFET

N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using h.
1.0 · rating-1
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