E25-14 Datasheet | Specifications & PDF Download

MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Scree

Rating: 1 ★ (5 votes)

SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 MA4E2514 Series Case Style 1116 Features A Extremely Low Parasitic Capi

Rating: 1 ★ (5 votes)

256-Kbit (32 K × 8) Serial (I C) nvSRAM with Real Time Clock 256-Kbit (32 K × 8) Serial (I2C) nvSRAM with Real Time Clock CY14C256I CY14B256I, CY14E2

Rating: 1 ★ (5 votes)

MSS50-xxx-x Series High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Scre

Rating: 1 ★ (4 votes)

N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using h

Rating: 1 ★ (4 votes)

E25/E30 25~30 Watts DIP Type 2:1 Input DC - DC Converter ◆ 25-30W Isolated Output ◆ 2:1 Input Range ◆ Efficiency To 88% ◆ Regulated Outputs ◆ Remot

Rating: 1 ★ (3 votes)

MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Re

Rating: 1 ★ (3 votes)

MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Sc

Rating: 1 ★ (3 votes)

MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Sc

Rating: 1 ★ (3 votes)

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

Rating: 1 ★ (3 votes)

MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Scree

Rating: 1 ★ (3 votes)

CY14E256LA 256-Kbit (32 K × 8) nvSRAM 256-Kbit (32 K × 8) nvSRAM Features ■ 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14E256

Rating: 1 ★ (3 votes)

Rating: 1 ★ (3 votes)

UltraMOV® Varistor Series Metal-Oxide Varistors (MOVs) Radial Lead Varistors > UltraMOV® Varistor Series RoHS Agency Approvals Agency Agency Appro

Rating: 1 ★ (3 votes)

MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Re

Rating: 1 ★ (2 votes)

CY14C256Q CY14B256Q CY14E256Q 256-Kbit (32 K × 8) SPI nvSRAM Not Recommended for New Designs 256-Kbit (32 K × 8) SPI nvSRAM Features ■ 256-Kbit non

Rating: 1 ★ (2 votes)

NTE2513 (NPN) & NTE2514 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain–

Rating: 1 ★ (2 votes)

N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using h

Rating: 1 ★ (2 votes)

Metal-Oxide Varistors (MOVs) Radial Leaded Varistors > LV UltraMOV® Varistor Series LV UltraMOV® Varistor Series RoHS Phenolic Coated Epoxy Coated

Rating: 1 ★ (2 votes)

UltraMOV® Varistor Series Metal-Oxide Varistors (MOVs) Radial Lead Varistors > UltraMOV® Varistor Series RoHS Agency Approvals Agency Agency Appro

Rating: 1 ★ (2 votes)