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Preliminary Data Sheet, DS3, July 2003 DuSLIC Dual Channel Subscriber Line Interface Concept PEB 3264, Version 1.4 PEB 3265, Version 1.5 PEB 4264/-2,

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ICs for Communications High Voltage Subscriber Line IC HV-SLIC PEB/F 4065 Version 3.0 Data Sheet 03.98 DS 1 ht tp : Se//ww m w ico .s nd iem uc en

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Preliminary Data Sheet, DS3, July 2003 DuSLIC Dual Channel Subscriber Line Interface Concept PEB 3264, Version 1.4 PEB 3265, Version 1.5 PEB 4264/-2,

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Preliminary Data Sheet, DS3, July 2003 DuSLIC Dual Channel Subscriber Line Interface Concept PEB 3264, Version 1.4 PEB 3265, Version 1.5 PEB 4264/-2,

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        

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Preliminary Data Sheet, DS3, July 2003 DuSLIC Dual Channel Subscriber Line Interface Concept PEB 3264, Version 1.4 PEB 3265, Version 1.5 PEB 4264/-2,

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PEB 4050 - IGBT half-bridge power module VDC Ileg,rms fsw, max 400 V 50 A 50 kHz Rev. A / March 2021 GENERAL DESCRIPTION The PEB 4050 is a half-br

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        

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Preliminary Data Sheet, DS3, July 2003 DuSLIC Dual Channel Subscriber Line Interface Concept PEB 3264, Version 1.4 PEB 3265, Version 1.5 PEB 4264/-2,

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CEB4060AL-VB CEB4060AL-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.032 at VGS = 10 V 0.035

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CEP41A2/CEB41A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 40A, RDS(ON) =20mΩ @VGS = 4.5V. RDS(ON) =30mΩ @VGS = 2.5V. Super high

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CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. Supe

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CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Super high dense cell design for

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