EL-302 Datasheet | Specifications & PDF Download

www.DataSheet4U.com Model 3022 • Vibration/Shock Monitoring PC Board Mountable Accelerometer Millivolt Output Low Cost • Modal Analysis • Motion Cont

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Your specialist in innovating humidity & temperature sensors Standard AM2302/DHT22 AM2302/DHT22 with big case and wires Digital relative humidity &

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Data Sheet FEATURES High Voltage, 1.2 MHz/600 kHz, 800 mA, Low Quiescent Current Buck Regulator ADP2370/ADP2371 TYPICAL APPLICATION CIRCUIT VIN = 6V

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SI2302-VB SI2302-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at

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NCE2302D-VB NCE2302D-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042

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SMC2302SN Single N-Channel MOSFET ■DESCRIPTION SMC2302SN used trench technology are well suited for high efficiency fast switching applications, thi

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APM2302AAC-TRL-VB APM2302AAC-TRL-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V

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Microminiature 1 Amp Signal Relay E86876 FEATURES • Microminiature Design • DIL Package for PC Board or Socket • Low 5mm Profile • Meets FCC Part 68 V

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SLV2302B SLV2302B 20V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced

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SMC2302S Single N-Channel MOSFET ■DESCRIPTION SMC2302S used trench technology are well suited for high efficiency fast switching applications, this

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N-Channel 30 V (D-S) MOSFET DTQ6302-D www.din-tek.jp PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0014 at VGS = 10 V 0.0020 at VGS = 4.5 V ID (A)a, e

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TM2302N FN-VB TM2302N FN-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.

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sales.Mr.wang13826508770 www.sztssd.com YXD2302NE1 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The YXD2302NE1 uses advance

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Micrel, Inc. QUINT 2-INPUT OR/NOR GATE SY100S302 SY100S302 FEATURES DESCRIPTION s Max. propagation delay of 700ps s IEE min. of –45mA s Industry

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ISL9N302AS3ST-VB ISL9N302AS3ST-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0023 at VGS = 10 V

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N-Channel Enhancement Mode Power MOSFET Description The PE2302A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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TDA9302H VERTICAL DEFLECTION OUTPUT CIRCUIT . . . POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION DESCRIPTION The TDA9302H is a monolithic int

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www.DataSheet4U.com       Xiamen Hualian Electronics Co. , Ltd.         HPC3020 HPC3022 HPC3051 HPC3021 HPC3023

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