EL-302 Datasheet | Specifications & PDF Download

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TDA9302H VERTICAL DEFLECTION OUTPUT CIRCUIT . . . POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION DESCRIPTION The TDA9302H is a monolithic int

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AX5302 PWM Step-up Controller  GENERAL DESCRIPTION The AX5302 is high efficient PWM step-up controller. Designed to drive an external N-channel MOS

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EL5102, EL5103, EL5202, EL5203, EL5302 ® Data Sheet January 17, 2008 FN7331.8 400MHz Slew Enhanced VFAs The EL5x02 and EL5x03 families represent h

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www.DataSheet4U.com       Xiamen Hualian Electronics Co. , Ltd.         HPC3020 HPC3022 HPC3051 HPC3021 HPC3023

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K3020P(G) Series Vishay Telefunken Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically couple

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Data Sheet FEATURES High Voltage, 1.2 MHz/600 kHz, 800 mA, Low Quiescent Current Buck Regulator ADP2370/ADP2371 TYPICAL APPLICATION CIRCUIT VIN = 6V

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monolithic dual n-channel JFETs designed for • • • • FET Input Amplifiers • Low and Medium Frequency Differential Amplifiers • Impedance Converters •

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PED3025 N-Channel Enhancement Mode Power MOSFET Description The PED3025 uses advanced trench technology and design to provide excellent RDS(ON) with

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Alfa-MOS Technology General Description AFN2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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PI4ULS3V302 ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||

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DISCRETE LOW-NOISE OPERATIONAL AMPLIFIERS OPA302 특징 1. 고음질 오디오 그레이드 오피앰프 2. 모두 고성능 개별부품으로 구성 3. JFET 사용으로 고 입력임피던스 4. 여유 있는 구동력으로 저 임피던스회로에서 탁월한 효과 5.

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Process 83 NPD8301-03 N-Channel Monolithic Dual JFETs General Description The NPD8301 thru NPD8303 series of N-channel monolithic dual JFETs is des

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SIDACtor® Protection Thyristors Datasheet Pxxx2SxL Series Two-Chip Broadband Optimized™ SIDACtor® DO-214AA RoHS Pb e3 Description Pxxx2SxL Series T

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.3 * 1 &KDQQHO 9' 6026)(7 GENERAL DESCRIPTION The HM2302D is the N-Channel logic enhancement mode power field effect transistors are produce

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  www.DataSheet4U.com                                                                                        ACE2302                              

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SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced tre

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NPN 3DG3020 A1-HK ○R 3DG3020 A1-HK NPN ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 450 1.5 0

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