EL-303 Datasheet | Specifications & PDF Download

OEM ZIP DIP Sockets • BeCu contacts assure continuity with very short path to P.C. trace • Contact design prevents solder bridging and wicking • Zero

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Automotive Relays PCB Double Relays Double Mini Relay DMR n Limiting continuous current 30 A n Easiest PCB routing among all PCB relays Typical app

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EiceDRIVER™ gate driver 1EDI3033AS Single channel isolated SiC-MOSFET driver Features • Single channel isolated SiC driver using coreless transformer

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EiceDRIVER™ gate driver 1EDI3031AS Single channel isolated SiC-MOSFET driver Features • Single channel isolated SiC driver using coreless transformer

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EiceDRIVER™ gate driver 1EDI3030AS Single channel isolated SiC-MOSFET driver Features • Single channel isolated SiC driver using coreless transformer

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w w a t a D . w Shape U 4 t C/A-363X C/A-303X, e e h S C-303H C-303E C-303G C-303Y C-303SR C-363H C-363E C-363G C-363Y C-363SR A-303H A-303E A-303

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PI7C9X2G303EL PCI EXPRESS GEN 2 PACKET SWITCH 3-Port, 3-Lane, ExtremeLo PCIe 2.0 Packet Switch DATASHEET REVISION 2-2 August 2017 Document Number DS4

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w w a t a D . w Shape U 4 t C/A-363X C/A-303X, e e h S C-303H C-303E C-303G C-303Y C-303SR C-363H C-363E C-363G C-363Y C-363SR A-303H A-303E A-303

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DATA SHEET www.onsemi.com Digital FET, Dual N-Channel FDC6303N General Description These dual N−Channel logic level enhancement mode field effect tr

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sales.Mr.wang13826508770 www.sztssd.com RU3030M3 N-Channel Advanced Power MOSFET Features Pin Description • 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V

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EiceDRIVER™ gate driver 1EDI3035AS Single channel isolated SiC-MOSFET driver Features • Galvanic isolated SiC-MOSFET driver using coreless transforme

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AAT8303ITS-T1-VB AAT8303ITS-T1-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.011 at VGS = -

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WNM3030 Single N-Channel, 30V, 13A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 5.5 @ VGS= 10V 8.5 @ VGS= 4.5V WNM3030 Http://www.sh-willsemi.com

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SFY2303AT Product Description Silicon P-Channel MOSFET Features • -30V, -3.0A • RDS(ON) =85mΩ (Max.) @ VGS = -10V, ID =-3.0A • High Power and Current

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SM4303PSKC-TRG-VB SM4303PSKC-TRG-VB Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.011 at VGS = - 10 V 0.015

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26 NAS6303 - NAS6316 Series Specifications A 286 Stainless Steel Bolt, Hex Head, Close Tolerance 160,000 PSI Short Thread Basic No. NAS 6303 NAS 630

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CRMGGL0303A N-Channel 30V, 4.3mΩ Typ. Power MOSFET Description Features l 30V, 60A D RDS(ON) Typ = 4.3mΩ @ VGS = 10V RDS(ON) Typ = 6.5mΩ @ VGS = 4

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Automotive Relays PCB Double Relays Double Mini Relay DMR n Limiting continuous current 30 A n Easiest PCB routing among all PCB relays Typical app

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GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation I

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