EMB16N06G Datasheet | Specifications & PDF Download

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 16mΩ ID 6.7A G UIS, Rg 100% Tested

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SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Features ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.5

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