EMB3 Datasheet | Specifications & PDF Download

PEMB3 50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open 28 December 2022 Product data sheet 1. General description PNP/PN

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PEMB30; PUMB30 PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 01 — 31 March 2006 Product data sheet 1. Product profile 1.1

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Sep 14

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N & P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH P-CH BVDSS 30V -30V RDSON (MAX.) @VGS=10V 32mΩ 55mΩ RD

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 32mΩ 40mΩ ID 6.5A

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 35mΩ ID 5.5A Pb‐Free Lead Plating

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EMB3 / UMB3N / IMB3A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Parameter VCEO IC(MAX.) R1 Tr1 and T

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐22A G UIS, Rg 100% Tested

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A N Channel MOSFET UIS, Rg

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 35mΩ ID 5A G S Pb‐Free Lead Plating

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 39mΩ ID ‐12A G UIS, Rg 100% Tested

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EMB32N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 35mΩ ID 5.5A G UIS, Rg

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  35mΩ  ID  5.5A  G    S Pb‐Fr

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 35mΩ ID 5A G S Pb‐Free Lead Plating

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EMB3 FHA General purpose (Dual digital transistor) Datasheet AEC-Q101 Qualified Parameter VCEO IC R1 　 DTr1 and DTr2 -50V -100mA 4.7kΩ 　 lFeatur

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 32mΩ ID 6.5A Pb‐Free Lead Plating

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 35mΩ ID 5A G S Pb‐Free Lead Plating

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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 35mΩ ID ‐6.5A Pb‐Free Lead Platin

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JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB3 Dual Digital Transistors (PNP+PNP) FEATURES z

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