EMB3 Datasheet | Specifications & PDF Download

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A N Channel MOSFET UIS, Rg

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 35mΩ ID 5A G S Pb‐Free Lead Plating

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 39mΩ ID ‐12A G UIS, Rg 100% Tested

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 28mΩ ID 12A G UIS, Rg 100% Tested

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 32mΩ 40mΩ ID 6.5A

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) N‐CH 40V 35mΩ P‐CH ‐40V 44mΩ D1 G1 ID 12

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 41mΩ ID ‐26A G UIS, Rg 100% Tested

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 32mΩ ID 6.5A Pb‐Free Lead Plating

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EMB32N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 35mΩ ID 5.5A G UIS, Rg

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 39mΩ ID ‐12A G UIS, Rg 100% Tested

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID ‐60V 41mΩ ‐26A D G UIS, Rg 100% Tested S P

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐22A G UIS, Rg 100% Tested

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EMB30P03VAT P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐8A G S Pb‐Fr

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 35mΩ ID 5A G S Pb‐Free Lead Plating

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 35mΩ ID 5.5A Pb‐Free Lead Plating

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JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB3 Dual Digital Transistors (PNP+PNP) FEATURES z

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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 35mΩ ID ‐6.5A Pb‐Free Lead Platin

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID N‐CH 60V 37mΩ 12A P‐CH ‐60V 90mΩ ‐7A D1

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  35mΩ  ID  5.5A  G    S Pb‐Fr

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N & P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH P-CH BVDSS 30V -30V RDSON (MAX.) @VGS=10V 32mΩ 55mΩ RD

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