EMB6 Datasheet | Specifications & PDF Download

EMB61 Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet l Outline Parameter VCC IC(MAX.) R1 R2 DTr1 and DTr2 -50V -100mA 10

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 12A G UIS, Rg 100% Tested

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EMB60 Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet l Outline Parameter VCC IC(MAX.) R1 R2 DTr1 and DTr2 -50V -100mA 2.

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 58mΩ ID 15A G UIS, Rg 100% Tested

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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 60mΩ ID ‐5A Pb‐Free Lead Plating

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EMB60N06A-VB EMB60N06A-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.0

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 3.5A G UIS, Rg 100% Tested

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EMB6 / UMB6N PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Outline Parameter Tr1 and Tr2 EMT6 UMT6

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EMB60A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 60mΩ ID 5A UIS, Rg 100%

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 12A G UIS, Rg 100% Tested

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EMB60A06S Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 60mΩ ID 5A UIS, 100% Te

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 12A G UIS, Rg 100% Tested

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 60V ‐60V RDSON (MAX.) 60mΩ 90mΩ ID 5A ‐

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 8A G UIS, Rg 100% Tested S

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 60mΩ ID 23A G UIS, Rg 100% Tested

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EMB60A06V Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 60mΩ ID 6A UIS, Rg 100%

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 60mΩ ID 6A G UIS, Rg 100% Tested

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