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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 90mΩ ID ‐10A G S Pb‐Free Lead Plat

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 20mΩ ID ‐8.5A Pb‐Free Lead Plating & H

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8909 ADVANCE INFORMATION DATA SHEET 3-PHASE BRUSHLESS DC MOTOR (Subject to change without notice) CONTROLLER/DRIVER WITH BACK-EMF SENSING April 3, 19

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -20V RDSON (MAX.) 100mΩ ID -3.4A G S Pb-Free Lead Pl

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    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐20V  D RDSON (MAX.)  25mΩ  ID  ‐7.8A  G    S

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www.DataSheet4U.com EMF17 / UMF17N Transistors Power management (dual transistors) EMF17 / UMF17N 2SA1774 and DTC123EE are housed independently in a

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MK eMMC Specification eMMC5.1 Product List MKEMF032GZ1E-C 32GB eMMC www.mkfounder.com eMMC5.1 Datasheet Revision History Version Rev 1.0 Date 20

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EMF02P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 3.2mΩ ID ‐100A G UIS, R

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 44mΩ ID -4A G S Pb-Free Lead Plati

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 11.5mΩ ID 8A G S Pb‐Free Lead Plati

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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 100mΩ ID ‐3A Pb‐Free Lead Plating

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -20V RDSON (MAX.) 60mΩ ID -4A G S Pb-Free Lead Plati

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EMF14A02V Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 14.8mΩ ID 7A UIS 100% T

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MCP960X/L0X/RL0X Thermocouple EMF to Temperature Converter, ±1.5°C Maximum Accuracy Features • Thermocouple Electromotive Force (EMF) to °C Converte

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NTS10100EMFS, NRVTS10100EMFS Very Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very L

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NTS10100EMFS, NRVTS10100EMFS Very Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very L

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NTS10120EMFS, NRVTS10120EMFS Very Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very L

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -20V RDSON (MAX.) 20mΩ ID -8.5A P Channel MOSFET UIS, R

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 60mΩ ID ‐4.5A G S Pb‐Free Lead Pla

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