EMF90P02A Datasheet - Excelliance MOS

EMF90P02A P?Channel Logic Level Enhancement Mode Field Effect Transistor

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 90mΩ ID ‐10A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMF90P02A LIMITS ±12 ‐10.

EMF90P02A Datasheet (178.14 KB)

EMF90P02A Datasheet Preview — Preview of EMF90P02A PDF

Datasheet Details

Part number:

EMF90P02A

Manufacturer:

Excelliance MOS

File Size:

178.14 KB

Description:

P?channel logic level enhancement mode field effect transistor.

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EMF90P02A P ?Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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