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S9014 - NPN General Purpose Transistors
S9014 NPN General Purpose Transistors TO-92 www.DataSheet4U.com 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating .RJP3065DPP - IGBT
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.K1058 - Silicon N-Channel MOSFET
2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Featu.BCR08AM-14A - Triac
BCR08AM-14A 700V - 0.8A - Triac Low Power Use Features • IT (RMS): 0.8 A • VDRM: 700 V • IRGTI, IRGTI, IRGT III: 5 mA • Tj: 125 °C Data Sheet R07DS12.M30220MX-XXXGR - 16-BIT SINGLE-CHIP MICROCOMPUTER
Description Mitsubishi microcomputers M30220 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30220 group of single-chip microcomputers .RJP4065DPP - IGBT
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.RNA51957B - Voltage Detecting a System Resetting IC Series
www.DataSheet4U.com RNA51957A,B Voltage Detecting, System Resetting IC Series REJ03D0912-0100 Rev.1.00 Oct 10, 2008 Description RNA51957A,B are semi.BCR8LM-14LB - Triac
BCR8LM-14LB Triac Medium Power Use Features IT (RMS) : 8 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 1800 V Outline RENES.2S15902FP - 6ch Electronic Volume
R2S15902FP www.DataSheet4U.com 6ch Electronic Volume with 4 Input Selector REJ03F0152-0100 Rev.1.0 Nov.22.2005 Description R2S15902FP is an audio si.R2S15900SP - 2ch Electronic Volume with Surround
R2S15900SP 2ch Electronic Volume with Surround REJ03F0126-0130 Rev.1.3 May 30, 2005 Description The R2S15900SP is an optimum audio signal processor I.R2A15120FA - 15W/8ohm/BTL 2ch D class power amplifier
www.DataSheet4U.com お カタログののいについて 2010 4 1 をって NEC エレクトロニクスびルネサステクノロジ がし、のてのがにされております。いまして、には でのがっておりますが、のとしてですので、ごのしくおい しげます。 ルネサスエレクトロニクス ホームページ.RJP3063DPP - IGBT
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.BCR12LM-14LB - Triac
Preliminary Datasheet BCR12LM-14LB Triac Medium Power Use Features IT (RMS) : 12 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Vi.IDT82V3010 - T1/E1/OC3 TELECOM CLOCK GENERATOR
T1/E1/OC3 TELECOM CLOCK GENERATOR WITH DUAL REFERENCE INPUTS www.DataSheet4U.com IDT82V3010 FEATURES • Supports AT&T TR62411 • Supports ETSI ETS 300.64F7054 - HD64F7054
www.datasheet4u.com The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and .CDZ55C5V1S - Zener Diodes
Zener Diodes CDZ55C-S Series CDZ55C-S Series FEATURES Silicon planar power zener diodes SMD chip pattern, available in various dimension include.HN29V1G91T-30 - 128M X 8-bit AG-AND Flash Memory
HN29V1G91T-30 128M × 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev. 4.00 Jul.20.2004 Description The HN29V1G91 series achieves a write speed of 10 M.BCR1AM-12A - Triac
BCR1AM-12A Triac Low Power Use REJ03G1248-0200 Rev.2.00 Nov 30, 2007 Features • IT (RMS) : 1 A • VDRM : 600 V www.DataSheet4U.com • IFGTI , IRGTI, IR.K3446 - 2SK3446
2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V g.