Excel Semiconductor Datasheet | Specifications & PDF Download

RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant volta

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RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant volta

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EIB1415-4P UPDATED 06/14/06 14.40-15.35GHz 4W Internally Matched Power FET FEATURES • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance M

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www.DataSheet4U.com EIM4953-4 ISSUED 02/12/2008 4.9-5.3 GHz Multi-Stage Power Amplifier EXCELICS EIM4953-4 FEATURES • • • • • • • 4.9-5.3GHz Operat

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1N4678~1N4717 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 43V 4. VZ-tolerance±5% Applica

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ZMM55B Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Absolute Maximum Ratings

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RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant volta

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www.DataSheet4U.com EIC5972-12 UPDATED 11/10/2006 5.90-7.20 GHz 12-Watt Internally Matched Power FET Excelics EIC5972-12 945 .803 .079 MIN .079 MIN

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www.DataSheet4U.com EIC7678-25 UPDATED 07/23/2008 7.60-7.80 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 7

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www.DataSheet4U.com EIC8596-12 UPDATED 07/25/2007 8.50-9.60 GHz 12-Watt Internally Matched Power FET FEATURES • • • • • • • 8.50– 9.60GHz Bandwidth

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1N4678~1N4717 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 43V 4. VZ-tolerance±5% Applica

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MTZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Abso

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ZMM55B Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Absolute Maximum Ratings

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RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant volta

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BBY 58-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tu

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E ES S II Excel Semiconductor inc. ES29LV400E 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory www.DataSheet4U.com GENERAL FEA

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Excelics • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46

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EIB1415-0.3P UPDATED 8/31/2006 14.0-14.5 GHz 0.3-Watt Internally Matched Power FET 0.080 MIN Excelics EIB1415-0.3P 0.080 MIN DRAIN 0.020 0.250

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www.DataSheet4U.com EID8596A1-12 UPDATED 07/12/2007 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET FEATURES • • • • • • • 8.50 – 9.60 GHz Ban

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Excelics DATA SHEET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSI

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