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EID1112A1-5 - 11.70-12.70 GHz 5-Watt Internally Matched Power FET

Key Features

  • 11.70-12.70 GHz Bandwidth.
  • Input/Output Impedance Matched to 50 Ohms.
  • +37.5 dBm Output Power at 1dB Compression.
  • 8.0 dB Power Gain at 1dB Compression.
  • 35% Power Added Efficiency.
  • Hermetic Metal Flange Package.
  • 100% Tested for DC, RF, and RTH .060 MIN. Excelics YYWW SN .060 MIN. .650±.008 .512 GATE EID1112A1-5 DRAIN .319 .022 .094 .382 .004 .129 .045 .070 ±.008 ALL.

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Datasheet Details

Part number EID1112A1-5
Manufacturer Excelics Semiconductor
File Size 108.11 KB
Description 11.70-12.70 GHz 5-Watt Internally Matched Power FET
Datasheet download datasheet EID1112A1-5 Datasheet

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www.DataSheet4U.com EID1112A1-5 UPDATED 07/12/2007 11.70-12.70 GHz 5-Watt Internally Matched Power FET FEATURES • 11.70-12.70 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +37.5 dBm Output Power at 1dB Compression • 8.0 dB Power Gain at 1dB Compression • 35% Power Added Efficiency • Hermetic Metal Flange Package • 100% Tested for DC, RF, and RTH .060 MIN. Excelics YYWW SN .060 MIN. .650±.008 .512 GATE EID1112A1-5 DRAIN .319 .022 .094 .382 .004 .129 .045 .070 ±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 1200mA Gain at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 1200mA Gain Flatness f = 11.70-12.