EID1314A1-8 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 d Bm Output Power at 1d B pression 6.5 d B Power Gain at 1d B pression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID1314A1-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 2200m A f = 13.75-14.50GHz Drain Current at 1d B pression f = 13.75-14.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance2 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A MIN 38.5 5.5 TYP 39.5 6.5 ±0.6 27 2800 4200 -1.2 3.5 3600 5760 -2.5 4.0 o UNITS d Bm d B d B % m A m A V C/W Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 4 Revised July 2007 .. UPDATED 07/12/2007 13.75-14.50 GHz 8-Watt Internally-Matched Power FET CHARACTERISTIC VALUE 10 V -4.5 V IDSS 80 m A @ 3d B pression 35 W 150°C -65/+150°C ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy...