EID1112A1-8 Datasheet | Excelics Semiconductor

FEATURES - 11.70-12.70 GHz Bandwidth - Input/Output Impedance Matched to 50 Ohms - +39.5 d Bm Output Power at 1d B pression - 8.0 d B Power Gain at 1d B pression - 35% Power Added Efficiency - Hermetic Metal Flange Package - 100% Tested for DC, RF, and RTH .024 .421 YYWW .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 1 Caution! ESD sensitive device. MIN 38.5 7.0 TYP 39.5 8.0 ±0.6 35 2800 4400 -1.2 3.5 3200 5200 -2.5 4.0 o UNITS d Bm d B d B % m A m A V C/W P1d B G1d B ∆G PAE Id1d B IDSS VP RTH f = 11.70-12.70GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -3.0 V IDSS 80 m A @ 3d B pression 32 W 150°C -65/+150°C Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 2 Revised July 2007 .. UPDATED 07/12/2007 11.70-12.70 GHz 8-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES...