EID1314A1-12 Datasheet | Excelics Semiconductor

FEATURES - 13.75-14.50 GHz Bandwidth - Input/Output Impedance Matched to 50 Ohms - +41.0 d Bm Output Power at 1d B pression - 6.0 d B Power Gain at 1d B pression - 23% Power Added Efficiency - Hermetic Metal Flange Package - 100% Tested for DC, RF, and RTH .024 .421 YYWW .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL Caution! ESD sensitive device. MIN 40.0 5.0 TYP 41.0 6.0 ±0.6 23 3960 5900 -1.2 2.5 5100 8200 -2.5 3.5 o P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200m A Gain at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200m A Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200m A Power Added Efficiency at 1d B pression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 3200m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 14.40-15.35GHz UNITS d Bm d B d B % m A m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 64 m A Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -4.5 V IDSS 220 m A @ 3d B pression 35 W 150°C -65/+150°C Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 2 Revised July 2007 .. UPDATED: 07/12/2007 13.75- 14.50 GHz 12-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES...