F1004 Datasheet | Specifications & PDF Download

EMI FILTER HYBRID-HIGH RELIABILITY PD-97878 AF100461 SERIES Description The AF100461 Series EMI filter is designed to provide full compliance with t

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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REF1004 SBVS002 1.2V and 2.5V Micropower VOLTAGE REFERENCE FEATURES q INITIAL ACCURACY: REF1004-1.2 ±4mV REF1004-2.5 ±20mV q MINIMUM OPERATING CURR

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Dual High-power Super Fast Rectifier Chip Integration Technology Corporation ETF10005CT THRU ETF1010CT 10 Amperes High Power Super Fast Rectifiers V

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High-power Super Fast Rectifier Chip Integration Technology Corporation ETF10005 THRU ETF1010 10 Amperes High Power Super Fast Rectifiers VOLTAGE :

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DIP Switches ADF Series, Flush Actuator, THT Features I I I I Extremely high contact pressure system allows aqueous or solvent cleaning without tap

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FYPF1004DN FYPF1004DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection A

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Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambi

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SF1001G - SF1008G 10.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AB Features High efficiency, low VF High current capability High reliabilit

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SF1001G-SF1008G 10.0AMP. Glass Passivated Super Fast Rectifiers TO-220AB Features High efficiency, low VF High current capability High reliability H

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FPF1003-FPF1004 IntelliMAX™ Advanced Load Management Products December 2006 FPF1003-FPF1004 IntelliMAX™ Advanced Load Management Products Features „

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UTF10005CT THRU UTF1008CT 10A High Power Ultra Fast Rectifiers ■ Features • Dual rectifier construction, positive centetap, offer 5.0A half wave and

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Data Sheet August 1999 LG1600FXH Clock and Data Regenerator Features s s s s s s s s s s Integrated clock recovery and data retiming Surface-mount p

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PTF 10045 30 Watts, 1.60–1.65 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10045 is a common source N-channel enhancement-mode lateral MOS

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RF10048-A w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c

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SFF10005 THUR SFF1006 SUPER FAST GLASS PASSIVATED RECTIFIERS Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly

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UTF10005 THRU UTF1008 10A High Power Ultra Fast Rectifiers ■ Features • Low power loss, high efficiency. • High surge current capability. • Ultra fas

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PTF 10048 30 Watts, 2.1–2.2 GHz, W-CDMA GOLDMOS ® Field Effect Transistor Description The PTF 10048 is an internally matched 30–watt GOLDMOS FET inten

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ÐǺϵç×Ó SF1001 thru SF1007 XINGHE ELECTRONICS SUPERFAST RECOVERY RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 10 AMPERES FEATURES Low forward volt

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PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large si

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