F1005 Datasheet | Specifications & PDF Download

IntelliMAXt Advanced Load Management Products FPF1005 - FPF1006 General Description The FPF1005 & FPF1006 are low RDS P−Channel MOSFET load switches w

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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MURF1005 thru MURF1060 Pb ® Pb Free Plating Product MURF1005 thru MURF1060 ITO-220AB .406(10.3) .381(9.7) .134(3.4) .118(3.0) 10.0 Ampere Isolated

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Ultra fast Rectifier INCHANGE Semiconductor SFF1005G FEATURES ·Low forward voltage drop ·High current capability ·High reliability ·High surge curre

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BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

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DF1005S THRU DF110S 1A Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers ■ Features • Surge overload ratings to 30 amperes peak

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DF1005 THRU DF110 1A Miniature Glass Passivated Single-Phase Bridge Rectifiers ■ Features • Surge overload ratings to 30 amperes peak. • Recommended

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MCC Features • • • • • MURF1005CT
     omponents 21201 Itasca Street Chatsworth  # $ % #

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MCC Features • • • • • MURF1005CT
     omponents 21201 Itasca Street Chatsworth  # $ % #

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MURF1005 THRU MURF1060 Glass Passivated Super Fast Recovery Rectifier Reverse Voltage - 50 to 600 V Forward Current - 10 A Features • High efficiency

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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MCC Features • • • • • MURF1005CT
     omponents 21201 Itasca Street Chatsworth  # $ % #

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UGF1004GD thru UGF1008GD ® UGF1004GD thru UGF1008GD Pb Free Plating Product Pb 10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge

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Current Transducer LF 1005-S For the electronic measurement of currents: DC, AC, pulsed , with a galvanic isolation between the primary circuit (hig

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

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BF1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing

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ELECTRONICS INC. High Frequency Chip Inductors EPICF Type www.DataSheet4U.com Applications : Filtering of EMI from signal in electronic modules, h

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ESD CLAMP Data sheet PRODUCT SPECIFICATION Item : ESD CLAMP Part No. : IECF10054EC060FR Innochips Technology Co., Ltd. 11B-16L, Banwol Industrial Comp

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