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Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking MZs MZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C Storage temperature Channel temperature
VDS ID ±IG1/2SM +VG1SE Ptot
Tstg Tch
8 25 10 3 200
-55 ...
BF1005R Datasheet
